100 MHz0°C ~ 70°C(TA)512Mb(16M x 32)-LPDDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR2

Total: 4

MT48H16M32L2F5-10 TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

MT48H16M32L2F5-10

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

MT48H16M32L2B5-10 TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

MT48H16M32L2B5-10

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

Skhynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

box

TR

Memory type

Volatile

storage capacity

512Mb(16M x 32)

working temperature

0°C ~ 70°C(TA)

Clock frequency

100 MHz

Encapsulation/Housing

90-VFBGA

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