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Home/    Category/    FET, MOSFET/    MSCSM120AM042CD3AG

PM-MOSFET-SIC-SBD~-D3 MSCSM120AM042CD3AG

MSCSM120AM042CD3AG image
The pictures are for reference only
Brand:
Microchip
Model:
MSCSM120AM042CD3AG
Description:
PM-MOSFET-SIC-SBD~-D3
Stock:
11217
Type:
goods in stock
Store:
Hong kong
ECAD Model:
Condition : NEW
Availability : ln Stock
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    495A(Tc)
  • Drain source voltage (Vdss)
    1200V(1.2kV)
  • FET Type
    2 N Channel(phase angle)
  • FET function
    SiC
  • Gate charge (Qg) at different Vgs (maximum)
    1392nC @ 20V
  • Input capacitance at different Vds (Ciss) (maximum)
    18.1pF @ 1000V
  • On resistance (maximum) for different Ids and Vgs
    5.2 mΩ @ 240A,20V
  • Power - maximum
    2.031kW(Tc)
  • Vgs (th) (maximum) for different Ids
    2.8V @ 6mA
  • packing
    box
  • working temperature
    -40°C ~ 175°C(TJ)
  • Encapsulation/Housing
    module
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Base installation
  • Part status
    On sale
    • Please send RFQ , your dedicated sales manager will respond immediately.
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