IC DRAM 2GBIT LVSTL 11 200WFBGA W66BL6NBUAGI TR
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Description:
IC DRAM 2GBIT LVSTL 11 200WFBGA
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Parameters
1.06V ~ 1.17V,1.7V ~ 1.95V
Write cycle time - words, pages
DataSheet
W66BL6NBUAGI TR(FLASH)ByWinbondDesign and production, ICQQG Electronic component purchase website provides sufficient inventory603,Price reference "real-time change" China/Hongkong。 W66BL6NBUAGI TR package/specs, Download W66BL6NBUAGI TR、Datasheet。