MOSFET N-CH 650V 11A DPAK STD16N65M2
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Description:
MOSFET N-CH 650V 11A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD16N65M2（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66321,Price reference "real-time change" China/Hongkong。 STD16N65M2 package/specs, Download STD16N65M2、Datasheet。
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