STP18N60M2 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STP18N60M2

Description:

MOSFET N-CH 600V 13A TO220

Stock:

73322

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

13A(Tc)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

21.5 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

791 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

280 mΩ @ 6.5A,10V

Power dissipation (maximum)

110W(Tc)

Vgs (max)

±25V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

MDmesh™ II Plus

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

Download STP18N60M2.pdf

STP18N60M2（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73322,Price reference "real-time change" China/Hongkong。 STP18N60M2 package/specs, Download STP18N60M2、Datasheet。

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MOSFET N-CH 600V 13A TO220 STP18N60M2