MOSFET N-CH 24V 80A DPAK STD110NH02LT4

Current at 25 ° C - continuous drain (Id)

80A(Tc)

Drain source voltage (Vdss)

24 V

Drive voltage (maximum RdsOn, minimum RdsOn)

5V,10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

93 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

4450 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

5 mΩ @ 40A,10V

Power dissipation (maximum)

125W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR

series

STripFET™ III

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DPAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production