2V7002KT1G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

2V7002KT1G

Description:

MOSFET N-CH 60V 320MA SOT23

Stock:

65350

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

RFQ

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Parameters

Current at 25 ° C - continuous drain (Id)

320mA(Ta)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

0.7 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

24.5 pF @ 20 V

On resistance (maximum) for different Ids and Vgs

1.6 Ω @ 500mA,10V

Power dissipation (maximum)

300mW(Tj)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.3V @ 250µA

packing

TR,CT,bulk

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-3(TO-236)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

Download 2V7002KT1G.pdf

2V7002KT1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65350,Price reference "real-time change" China/Hongkong。 2V7002KT1G package/specs, Download 2V7002KT1G、Datasheet。

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MOSFET N-CH 60V 320MA SOT23 2V7002KT1G