MOSFET P-CH 20V 4.5A SUPERSOT6 FDC640P

Current at 25 ° C - continuous drain (Id)

4.5A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,4.5V

FET Type

P channels

Gate charge (Qg) at different Vgs (maximum)

13 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

890 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

53 mΩ @ 4.5A,4.5V

Power dissipation (maximum)

1.6W(Ta)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

packing

TR,CT

series

PowerTrench®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SuperSOT™-6

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale