FQP5N90 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

FQP5N90

Description:

MOSFET N-CH 900V 5.4A TO220-3

Stock:

60028

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

RFQ

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Parameters

Current at 25 ° C - continuous drain (Id)

5.4A(Tc)

Drain source voltage (Vdss)

900 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

40 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1550 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

2.3 Ω @ 2.7A,10V

Power dissipation (maximum)

158W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 250µA

packing

pipe

series

QFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

FQP5N90（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60028,Price reference "real-time change" China/Hongkong。 FQP5N90 package/specs, Download FQP5N90、Datasheet。

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MOSFET N-CH 900V 5.4A TO220-3 FQP5N90