MOSFET N-CH 25V 11.4A/78A DPAK NTD78N03T4

Current at 25 ° C - continuous drain (Id)

11.4A(Ta),78A(Tc)

Drain source voltage (Vdss)

25 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

35 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

2250 pF @ 12 V

On resistance (maximum) for different Ids and Vgs

6 mΩ @ 78A,10V

Power dissipation (maximum)

1.4W(Ta),64W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

TR

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DPAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production