FDMS8570SDC parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

FDMS8570SDC

Description:

MOSFET N-CH 25V 28A/60A DLCOOL56

Stock:

77299

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

28A(Ta),60A(Tc)

Drain source voltage (Vdss)

25 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Schottky diode

Gate charge (Qg) at different Vgs (maximum)

42 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2825 pF @ 13 V

On resistance (maximum) for different Ids and Vgs

2.8 mΩ @ 28A,10V

Power dissipation (maximum)

3.3W(Ta),59W(Tc)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

2.2V @ 1mA

packing

TR,CT

series

PowerTrench®, SyncFET™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PQFN(5x6)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

Download FDMS8570SDC.pdf

FDMS8570SDC（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77299,Price reference "real-time change" China/Hongkong。 FDMS8570SDC package/specs, Download FDMS8570SDC、Datasheet。

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MOSFET N-CH 25V 28A/60A DLCOOL56 FDMS8570SDC