NVD3055-150T4G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVD3055-150T4G

Description:

MOSFET N-CH 60V 9A DPAK

Stock:

53077

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

9A(Ta)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

15 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

280 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

150 mΩ @ 4.5A,10V

Power dissipation (maximum)

28.8W(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DPAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

Download NVD3055-150T4G.pdf

NVD3055-150T4G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53077,Price reference "real-time change" China/Hongkong。 NVD3055-150T4G package/specs, Download NVD3055-150T4G、Datasheet。

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