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    Home/    Category/    MOSFET/    NTMFS0D6N03CT1G

    MOSFET, POWER, SINGLE N-CHANNEL NTMFS0D6N03CT1G

    NTMFS0D6N03CT1G image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTMFS0D6N03CT1G
    Description:
    MOSFET, POWER, SINGLE N-CHANNEL
    Stock:
    39984
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    60A(Ta),433A(Tc)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    145 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    10500 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    0.62 mΩ @ 30A,10V
  • Power dissipation (maximum)
    3.9W(Ta),200W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    2.2V @ 280µA
  • packing
    TR,CT
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    -
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    NTMFS0D6N03CT1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39984,Price reference "real-time change" China/Hongkong。 NTMFS0D6N03CT1G package/specs, Download NTMFS0D6N03CT1G、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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