MOSFET P-CH 20V 5.5A VS-6 TPC6111(TE85L,F,M)

Current at 25 ° C - continuous drain (Id)

5.5A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.5V,4.5V

FET Type

P channels

Gate charge (Qg) at different Vgs (maximum)

10 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

700 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

40 mΩ @ 2.8A,4.5V

Power dissipation (maximum)

700mW(Ta)

Vgs (max)

±8V

Vgs (th) (maximum) for different Ids

1V @ 1mA

packing

TR,CT

series

U-MOSV

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

VS-6(2.9x2.8)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

Final sale