TPHR9003NL,L1Q parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TPHR9003NL,L1Q

Description:

MOSFET N-CH 30V 60A 8SOP

Stock:

42561

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$0.39

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Parameters

Current at 25 ° C - continuous drain (Id)

60A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

74 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

6900 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

0.9 mΩ @ 30A,10V

Power dissipation (maximum)

1.6W(Ta),78W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.3V @ 1mA

packing

TR,CT

series

U-MOSVIII-H

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

8-SOP Advance(5x5)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

TPHR9003NL,L1Q（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42561,Price reference "real-time change" China/Hongkong。 TPHR9003NL,L1Q package/specs, Download TPHR9003NL,L1Q、Datasheet。

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