MOSFET N-CH 150V 21A D2PAK IRF3315STRR

Current at 25 ° C - continuous drain (Id)

21A(Tc)

Drain source voltage (Vdss)

150 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

95 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1300 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

82 mΩ @ 12A,10V

Power dissipation (maximum)

3.8W(Ta),94W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

TR

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

D2PAK

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production