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    Home/    Category/    MOSFET/    BUZ32H3045AATMA1

    MOSFET N-CH 200V 9.5A TO263-3 BUZ32H3045AATMA1

    BUZ32H3045AATMA1 image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    BUZ32H3045AATMA1
    Description:
    MOSFET N-CH 200V 9.5A TO263-3
    Stock:
    10902
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    9.5A(Tc)
  • Drain source voltage (Vdss)
    200 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    530 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    400 mΩ @ 6A,10V
  • Power dissipation (maximum)
    75W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 1mA
  • packing
    pipe
  • series
    SIPMOS®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    PG-TO263-3-2
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    BUZ32H3045AATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10902,Price reference "real-time change" China/Hongkong。 BUZ32H3045AATMA1 package/specs, Download BUZ32H3045AATMA1、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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