IRFH7110TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRFH7110TRPBF

Description:

MOSFET N-CH 100V 11A/58A 8PQFN

Stock:

25432

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Parameters

Current at 25 ° C - continuous drain (Id)

11A(Ta),58A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

87 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3240 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

13.5 mΩ @ 35A,10V

Power dissipation (maximum)

3.6W(Ta),104W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 100µA

packing

TR,bulk

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PQFN(5x6)

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRFH7110TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25432,Price reference "real-time change" China/Hongkong。 IRFH7110TRPBF package/specs, Download IRFH7110TRPBF、Datasheet。

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