IRFHM8228TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRFHM8228TRPBF

Description:

MOSFET N-CH 25V 19A 8PQFN

Stock:

65034

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$0.04

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Parameters

Current at 25 ° C - continuous drain (Id)

19A(Ta)

Drain source voltage (Vdss)

25 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

18 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1667 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

5.2 mΩ @ 20A,10V

Power dissipation (maximum)

2.8W(Ta),34W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.35V @ 25µA

packing

TR,bulk

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PQFN(3.3x3.3),Power33

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRFHM8228TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65034,Price reference "real-time change" China/Hongkong。 IRFHM8228TRPBF package/specs, Download IRFHM8228TRPBF、Datasheet。

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