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    Home/    Category/    MOSFET/    IRFH7190TRPBF

    MOSFET N-CH 100V 15A/82A PQFN IRFH7190TRPBF

    IRFH7190TRPBF image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IRFH7190TRPBF
    Description:
    MOSFET N-CH 100V 15A/82A PQFN
    Stock:
    99885
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    15A(Ta),82A(Tc)
  • Drain source voltage (Vdss)
    100 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    39 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1685 pF @ 50 V
  • On resistance (maximum) for different Ids and Vgs
    7.5 mΩ @ 49A,10V
  • Power dissipation (maximum)
    3.6W(Ta),104W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    3.6V @ 100µA
  • packing
    TR
  • series
    FASTIRFET™, HEXFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    PQFN(5x6)
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IRFH7190TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99885,Price reference "real-time change" China/Hongkong。 IRFH7190TRPBF package/specs, Download IRFH7190TRPBF、Datasheet。
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