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    Home/    Category/    MOSFET/    IPD088N06N3GATMA1

    MOSFET N-CH 60V 50A TO252-3 IPD088N06N3GATMA1

    IPD088N06N3GATMA1 image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IPD088N06N3GATMA1
    Description:
    MOSFET N-CH 60V 50A TO252-3
    Stock:
    64079
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    50A(Tc)
  • Drain source voltage (Vdss)
    60 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    48 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    3900 pF @ 30 V
  • On resistance (maximum) for different Ids and Vgs
    8.8 mΩ @ 50A,10V
  • Power dissipation (maximum)
    71W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 34µA
  • packing
    TR
  • series
    OptiMOS™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    PG-TO252-3-311
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    IPD088N06N3GATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64079,Price reference "real-time change" China/Hongkong。 IPD088N06N3GATMA1 package/specs, Download IPD088N06N3GATMA1、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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