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    Home/    Category/    DDR/    MT46V128M4BN-6:D

    IC DRAM 512MBIT PARALLEL 60FBGA MT46V128M4BN-6:D

    MT46V128M4BN-6:D image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT46V128M4BN-6:D
    Description:
    IC DRAM 512MBIT PARALLEL 60FBGA
    Stock:
    15456
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    15ns
  • Access time
    700 ps
  • Clock frequency
    167 MHz
  • Current - maximum
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    56-TFSOP(0.724,18.40mm wide)
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    2.3V ~ 2.7V
  • packing
    pallet
  • series
    -
  • storage capacity
    512Mb(128M x 4)
  • technology
    SDRAM - DDR
  • working temperature
    0°C ~ 70°C(TA)
  • Encapsulation/Housing
    60-TFBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • -
    • PDFicoDataSheet
    MT46V128M4BN-6:D（DDR）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15456,Price reference "real-time change" China/Hongkong。 MT46V128M4BN-6:D package/specs, Download MT46V128M4BN-6:D、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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    Expected 15%-20% decline in NAND Flash prices in the fourth quarter 2022.09.29
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