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IC DRAM 2GBIT LVSTL 11 200WFBGA W66BL6NBUAGI TR

W66BL6NBUAGI TR image
The pictures are for reference only
Brand:
Model:
W66BL6NBUAGI TR
Description:
IC DRAM 2GBIT LVSTL 11 200WFBGA
Stock:
603
Type:
goods in stock
Store:
Hong kong
DataSheet:
ECAD Model:
RFQ
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产品参数icoParameters
  • Clock frequency
    2.133GHz
  • Memory interface
    LVSTL_11
  • Memory type
    Volatile
  • Voltage - Supply
    1.06V ~ 1.17V,1.7V ~ 1.95V
  • Write cycle time - words, pages
    18ns
  • packing
    CT
  • storage capacity
    2Gb(128M x 16)
  • technology
    SDRAM - Mobile LPDDR4
  • working temperature
    -40°C ~ 95°C(TC)
  • Encapsulation/Housing
    200-WFBGA
  • Country of origin
    Taiwan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • PDFicoDataSheet
    W66BL6NBUAGI TR(FLASH)ByWinbondDesign and production, ICQQG Electronic component purchase website provides sufficient inventory603,Price reference "real-time change" China/Hongkong。 W66BL6NBUAGI TR package/specs, Download W66BL6NBUAGI TR、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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