palletSurface mount1Gb-DDR2Parameter Specification Quotation DataSheet-ICQQG

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Brand:

Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel

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Memory format:

DRAM

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Installation type:

Surface mount

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packing:

pipe pallet TR box TR,CT CT bulk

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Memory type:

Volatile

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storage capacity :

512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)

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Voltage - Supply:

1.55V ~ 1.9V 1.7V ~ 1.9V

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working temperature :

-40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)

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Clock frequency:

266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz

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Access time:

600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps

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choosed:

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Total：33

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Mfr.Part #

Brand

Description

DataSheet

Pricing(USD)

Qty

W97AH2KBVX2I

IC DRAM 1GBIT PARALLEL 134VFBGA

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W97AH2KBVX2E

IC DRAM 1GBIT PARALLEL 134VFBGA

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W971GG8SB25I

IC DRAM 1GBIT PARALLEL 60WBGA

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W971GG6SB25I

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG6SB-25

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG6SB-18

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG8JB25I

IC DRAM 1GBIT PARALLEL 60WBGA

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W971GG8KB25I

IC DRAM 1GBIT PARALLEL 60WBGA

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W971GG8KB-25

IC DRAM 1GBIT PARALLEL 60WBGA

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W971GG6KB25I

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG6KB-25

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG6KB-18

IC DRAM 1GBIT PARALLEL 84WBGA

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W97AH6KBVX2E

IC DRAM 1GBIT PARALLEL 134VFBGA

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W971GG8NB25I

IC DRAM 1GBIT PARALLEL 60WBGA

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W971GG8NB-25

IC DRAM 1G PARALLEL 60WBGA

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W97AH6KBVX2I

IC DRAM 1GBIT PARALLEL 134VFBGA

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W971GG6NB25I

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG8SS25I

IC DRAM 1GBIT SSTL 18 60WBGA

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W971GG6NB-25

IC DRAM 1GBIT PARALLEL 84WBGA

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W971GG6NB-18

IC DRAM 1GBIT PARALLEL 84WBGA

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