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K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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Brand:
Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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Memory format:
DRAM
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Installation type:
Surface mount
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packing:
pipe pallet TR box TR,CT CT bulk
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Memory type:
Volatile
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storage capacity :
512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)
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Voltage - Supply:
1.55V ~ 1.9V 1.7V ~ 1.9V
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working temperature :
-40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
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Clock frequency:
266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz
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Access time:
600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps
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choosed:
  • -40°C ~ 85°C(TA)
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  • 512Mb
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    • Total：6
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    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    W979H6KBVX2I
    W979H6KBVX2I
    Winbond
    IC DRAM 512MBIT PAR 134VFBGA
    Datasheet
    Call
    RFQ
    W979H6KBVX2I TR
    W979H6KBVX2I TR
    Winbond
    IC DRAM 512MBIT PAR 134VFBGA
    Datasheet
    Call
    RFQ
    W979H2KBVX2I
    W979H2KBVX2I
    Winbond
    IC DRAM 512MBIT PAR 134VFBGA
    Datasheet
    Call
    RFQ
    MT47H64M16NF-25E XIT:M TR
    MT47H64M16NF-25E XIT:M TR
    Micron
    IC DRAM 1GBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H64M16NF-25E AIT:M TR
    MT47H64M16NF-25E AIT:M TR
    Micron
    IC DRAM 1GBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16NF-25E AIT:H TR
    MT47H32M16NF-25E AIT:H TR
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
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