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K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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Brand:
Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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Memory format:
DRAM
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Installation type:
Surface mount
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packing:
pipe pallet TR box TR,CT CT bulk
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Memory type:
Volatile
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storage capacity :
512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)
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Voltage - Supply:
1.55V ~ 1.9V 1.7V ~ 1.9V
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working temperature :
-40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
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Clock frequency:
266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz
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Access time:
600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps
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choosed:
  • 0°C ~ 85°C(TC)
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    • Total：116
    Photo
    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    IS43DR82560B-3DBL
    IS43DR82560B-3DBL
    ISSI
    IC DRAM 2GBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    IS43DR82560B-25EBL
    IS43DR82560B-25EBL
    ISSI
    IC DRAM 2GBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    IS43DR86400E-3DBL
    IS43DR86400E-3DBL
    ISSI
    IC DRAM 512MBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    IS43DR86400E-25DBL
    IS43DR86400E-25DBL
    ISSI
    IC DRAM 512MBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    IS43DR16320E-25DBL
    IS43DR16320E-25DBL
    ISSI
    IC DRAM 512MBIT PARALLEL 84TWBGA
    Datasheet
    Call
    RFQ
    IS43DR16320E-3DBL
    IS43DR16320E-3DBL
    ISSI
    IC DRAM 512MBIT PARALLEL 84TWBGA
    Datasheet
    Call
    RFQ
    IS43DR16128C-3DBL
    IS43DR16128C-3DBL
    ISSI
    IC DRAM 2GBIT PARALLEL 84TWBGA
    Datasheet
    Call
    RFQ
    IS43DR82560C-3DBL
    IS43DR82560C-3DBL
    ISSI
    IC DRAM 2GBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    MT47H512M4THN-25E:M
    MT47H512M4THN-25E:M
    Micron
    IC DRAM 2GBIT PARALLEL 63FBGA
    Datasheet
    Call
    RFQ
    MT47H64M16NF-25E:M
    MT47H64M16NF-25E:M
    Micron
    IC DRAM 1GBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H128M8SH-25E:M
    MT47H128M8SH-25E:M
    Micron
    IC DRAM 1GBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16HR-3:G
    MT47H32M16HR-3:G
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H128M16RT-187E:C
    MT47H128M16RT-187E:C
    Micron
    IC DRAM 2GBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47R64M16HR-25E:H
    MT47R64M16HR-25E:H
    Micron
    IC DRAM 1GBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47R512M4EB-25E:C
    MT47R512M4EB-25E:C
    Micron
    IC DRAM 2GBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47R256M8EB-25E:C
    MT47R256M8EB-25E:C
    Micron
    IC DRAM 2GBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47R256M4CF-3:H
    MT47R256M4CF-3:H
    Micron
    IC DRAM 1GBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47R256M4CF-25E:H
    MT47R256M4CF-25E:H
    Micron
    IC DRAM 1GBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H64M8CF-187E:G
    MT47H64M8CF-187E:G
    Micron
    IC DRAM 512MBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H512M4THN-3:H
    MT47H512M4THN-3:H
    Micron
    IC DRAM 2GBIT PARALLEL 63FBGA
    Datasheet
    Call
    RFQ
    X
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