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K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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Brand:
Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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Memory format:
DRAM
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Installation type:
Surface mount
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packing:
pipe pallet TR box TR,CT CT bulk
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Memory type:
Volatile
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storage capacity :
512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)
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Voltage - Supply:
1.55V ~ 1.9V 1.7V ~ 1.9V
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working temperature :
-40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
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Clock frequency:
266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz
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Access time:
600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps
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choosed:
  • -40°C ~ 85°C(TC)
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  • Surface mount
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    • Total：53
    Photo
    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    IS46DR81280C-3DBLA1-TR
    IS46DR81280C-3DBLA1-TR
    ISSI
    IC DRAM 1GBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    IS46DR81280C-25DBLA1-TR
    IS46DR81280C-25DBLA1-TR
    ISSI
    IC DRAM 1GBIT PARALLEL 60TWBGA
    Datasheet
    Call
    RFQ
    IS43DR16160B-3DBI-TR
    IS43DR16160B-3DBI-TR
    ISSI
    IC DRAM 256MBIT PARALLEL 84TWBGA
    Datasheet
    Call
    RFQ
    W97AH6NBVA1I
    W97AH6NBVA1I
    Winbond
    1GB LPDDR2, X16, 533MHZ, -40 ~ 8
    Datasheet
    Call
    RFQ
    W97AH2NBVA1I
    W97AH2NBVA1I
    Winbond
    1GB LPDDR2, X32, 533MHZ, -40 ~ 8
    Datasheet
    Call
    RFQ
    W978H6KBVX2I TR
    W978H6KBVX2I TR
    Winbond
    IC DRAM 256MBIT HSUL 12 134VFBGA
    Datasheet
    Call
    RFQ
    MT47H64M8CB-37E IT:B TR
    MT47H64M8CB-37E IT:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H64M8CB-37E IT:B
    MT47H64M8CB-37E IT:B
    Micron
    IC DRAM 512MBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H64M8CB-25:B TR
    MT47H64M8CB-25:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H64M8CB-25:B
    MT47H64M8CB-25:B
    Micron
    IC DRAM 512MBIT PARALLEL 60FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-5E L:B TR
    MT47H32M16CC-5E L:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-5E L:B
    MT47H32M16CC-5E L:B
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-5E IT:B TR
    MT47H32M16CC-5E IT:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-5E IT:B
    MT47H32M16CC-5E IT:B
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-3E:B TR
    MT47H32M16CC-3E:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-3E:B
    MT47H32M16CC-3E:B
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-37E L:B TR
    MT47H32M16CC-37E L:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-37E L:B
    MT47H32M16CC-37E L:B
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-37E IT:B TR
    MT47H32M16CC-37E IT:B TR
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    MT47H32M16CC-37E IT:B
    MT47H32M16CC-37E IT:B
    Micron
    IC DRAM 512MBIT PARALLEL 84FBGA
    Datasheet
    Call
    RFQ
    X
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