-25°C ~ 85°C(TC)-DDR2Parameter Specification Quotation DataSheet-ICQQG

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Brand:

Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel

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Memory format:

DRAM

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Installation type:

Surface mount

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packing:

pipe pallet TR box TR,CT CT bulk

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Memory type:

Volatile

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storage capacity :

512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)

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Voltage - Supply:

1.55V ~ 1.9V 1.7V ~ 1.9V

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working temperature :

-40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)

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Clock frequency:

266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz

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Access time:

600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps

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choosed:

-25°C ~ 85°C(TC)

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Total：14

Photo

Mfr.Part #

Brand

Description

DataSheet

Pricing(USD)

Qty

W97BH6KBVX2E

IC DRAM 2GBIT PARALLEL 134VFBGA

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RFQ

W97BH6KBQX2E

IC DRAM 2GBIT PARALLEL 168WFBGA

Call

RFQ

W97BH2KBVX2E

IC DRAM 2GBIT PARALLEL 134VFBGA

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RFQ

W97BH2KBQX2E

IC DRAM 2GBIT PARALLEL 168WFBGA

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RFQ

W97AH2KBVX2E

IC DRAM 1GBIT PARALLEL 134VFBGA

1+：$5.36

RFQ

W978H6KBQX2E

IC DRAM 256MBIT PAR 168WFBGA

Call

RFQ

W978H2KBQX2E

IC DRAM 256MBIT PAR 168WFBGA

Call

RFQ

W979H6KBVX2E

IC DRAM 512MBIT PAR 134VFBGA

1+：$1.03

RFQ

W979H2KBVX2E

IC DRAM 512MBIT PAR 134VFBGA

1+：$1.03

RFQ

W97AH6KBVX2E

IC DRAM 1GBIT PARALLEL 134VFBGA

Call

RFQ

W978H2KBVX2E

IC DRAM 256MBIT PAR 134VFBGA

1+：$0.93

RFQ

W979H6KBVX2E TR

W979H6KBVX2E TR

IC DRAM 512MBIT PAR 134VFBGA

1+：$0.88

RFQ

W97AH6KBVX2E TR

W97AH6KBVX2E TR

IC DRAM 1GBIT PARALLEL 134VFBGA

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W978H6KBVX2E

IC DRAM 256MBIT PAR 134VFBGA

1+：$1.17

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