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    • Hot：
    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home /    Category /    DDR2
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    Brand:
    Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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    Memory format:
    DRAM
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    Installation type:
    Surface mount
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    packing:
    pipe pallet TR box TR,CT CT bulk
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    Memory type:
    Volatile
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    storage capacity :
    512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)
    more
    Voltage - Supply:
    1.55V ~ 1.9V 1.7V ~ 1.9V
    more
    working temperature :
    -40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
    more
    Clock frequency:
    266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz
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    Access time:
    600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps
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    choosed:
  • 450 ns
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    • Total：6
    Photo
    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    IS43DR86400E-3DBLI-TR
    IS43DR86400E-3DBLI-TR
    ISSI
    IC DRAM 512MBIT PARALLEL 60TWBGA
    Datasheet

    1+：$0.96

    RFQ
    IS43DR16320E-3DBLI-TR
    IS43DR16320E-3DBLI-TR
    ISSI
    IC DRAM 512MBIT PARALLEL 84TWBGA
    Datasheet

    1+：$0.83

    RFQ
    IS43DR86400E-3DBL
    IS43DR86400E-3DBL
    ISSI
    IC DRAM 512MBIT PARALLEL 60TWBGA
    Datasheet

    1+：$0.56

    RFQ
    IS43DR16320E-3DBLI
    IS43DR16320E-3DBLI
    ISSI
    IC DRAM 512MBIT PARALLEL 84TWBGA
    Datasheet

    1+：$0.78

    RFQ
    IS43DR86400E-3DBLI
    IS43DR86400E-3DBLI
    ISSI
    IC DRAM 512MBIT PARALLEL 60TWBGA
    Datasheet

    1+：$1.36

    RFQ
    IS43DR16320E-3DBL
    IS43DR16320E-3DBL
    ISSI
    IC DRAM 512MBIT PARALLEL 84TWBGA
    Datasheet

    1+：$0.65

    RFQ
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