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Brand:
Samsung Micron nanya ELPIDA ISSI
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Memory format:
- DRAM
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Installation type:
- Surface mount
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packing:
TR,CT TR pallet bulk pipe
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storage capacity :
32Mb(1M x 32) 1Gb(32M x 32) 256Mb(8M x 32) 128Mb(4M x 32) 2Gb(64M x 32) 8Gb(256M x 32) 4Gb(128M x 32) 128Mb(8M x 16) 64Mb(2M x 32) 64Mb(4M x 16) 512Mb(16M x 32) 1Gb(64M x 16) 2Gb(128M x 16) 512Mb(32M x 16) 256Mb(16M x 16) 4Gb(256M x 16) 32Mb(2M x 16)
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Voltage - Supply:
1.06V ~ 1.17V,1.7V ~ 1.95V 1.14V ~ 1.95V 1.7V ~ 1.9V - 1.14V ~ 1.3V,1.7V ~ 1.95V 1.7V ~ 1.95V
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working temperature :
-40°C ~ 85°C(TC) -40°C ~ 95°C(TC) -40°C ~ 85°C(TA) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) 0°C ~ 85°C(TC) -25°C ~ 85°C(TA) 0°C ~ 70°C(TA)
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Clock frequency:
208 MHz 104 MHz 1.6 GHz 133 MHz 533 MHz 400 MHz 333 MHz 200 MHz 166 MHz 167 MHz
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Encapsulation/Housing:
60-VFBGA 90-VFBGA 200-WFBGA FBGA FBGA60 QFN 200-TFBGA 90-LFBGA BGA 90-TFBGA 168-TFBGA 152-VFBGA 240-WFBGA 168-WFBGA 134-TFBGA 60-TFBGA 168-VFBGA
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choosed:
  • 64Mb(2M x 32)
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  • ISSI
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    • Total：8
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    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    IS43LR32200B-6BLI-TR
    IS43LR32200B-6BLI-TR
    ISSI
    IC DRAM 64MBIT PARALLEL 90TFBGA
    Datasheet
    Call
    RFQ
    IS43LR32200B-6BLI
    IS43LR32200B-6BLI
    ISSI
    IC DRAM 64MBIT PARALLEL 90TFBGA
    Datasheet
    Call
    RFQ
    IS43LR32320B-6BLI
    IS43LR32320B-6BLI
    ISSI
    IC DRAM 64MBIT PARALLEL 90LFBGA
    Datasheet
    Call
    RFQ
    IS43LR32320B-6BLI-TR
    IS43LR32320B-6BLI-TR
    ISSI
    IC DRAM 64MBIT PARALLEL 90LFBGA
    Datasheet
    Call
    RFQ
    IS43LR32320B-6BL
    IS43LR32320B-6BL
    ISSI
    IC DRAM 64MBIT PARALLEL 90LFBGA
    Datasheet
    Call
    RFQ
    IS43LR32320B-6BL-TR
    IS43LR32320B-6BL-TR
    ISSI
    IC DRAM 64MBIT PARALLEL 90LFBGA
    Datasheet
    Call
    RFQ
    IS43LR32200C-6BLI
    IS43LR32200C-6BLI
    ISSI
    IC DRAM 64MBIT PARALLEL 90TFBGA
    Datasheet
    Call
    RFQ
    IS43LR32200C-6BLI-TR
    IS43LR32200C-6BLI-TR
    ISSI
    IC DRAM 64MBIT PARALLEL 90TFBGA
    Datasheet
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