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K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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Brand:
Samsung Micron Skhynix nanya ELPIDA ISSI
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Memory format:
DRAM
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Installation type:
Surface mount
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packing:
CT TR,CT box TR pallet bulk bulk,pallet
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Memory type:
Volatile
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storage capacity :
8Gb(128M x 64) 512Mb(16M x 32) 4Gb(64M x 64) 2Gb(64M x 32) 1Gb(32M x 32) 256Mb(8M x 32) 128Mb(4M x 32) 12G 8G 16G 4G 1Gb(64M x 16) 4Gb(256M x 16) 512Mb(32M x 16) 256Mb(16M x 16) 16Gb(512M x 32) 16Gb(256M x 64) 12Gb(384M x 32) 8Gb(256M x 32) 6Gb(192M x 32) 4Gb(128M x 32) 128Mb(8M x 16) 64Mb(4M x 16)
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working temperature :
0°C ~ 85°C(TA) -40°C ~ 125°C(TC) -40°C ~ 105°C(TC) -40°C ~ 105°C(TA) -40°C ~ 85°C(TA) -30°C ~ 85°C(TC) -25°C ~ 85°C(TC) -40°C ~ 85°C(TC) 0°C ~ 70°C(TA) -25°C ~ 85°C(TA)
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Clock frequency:
125 MHz 104 MHz 533 MHz 400 MHz 333 MHz 100 MHz 133 MHz 166 MHz
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Encapsulation/Housing:
240-VFBGA 220-WFBGA 220-VFBGA 216-WFBGA 216-VFBGA 216-UFBGA 168-WFBGA 134-WFBGA 134-VFBGA 134-TFBGA 240-WFBGA 54-VFBGA TSSOP BGA-168 BGA-240 TSSOP54 BGA60 BGA-216 TSSOP-66 TSSOP66 TSOP66 QFP 90-VFBGA TSOP BGA FBGA 253-TFBGA 54-TSOP(0.400,10.16mm wide) 168-VFBGA 121-WFBGA
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choosed:
  • -40°C ~ 85°C(TA)
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  • pallet
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  • Volatile
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    • Total：37
    Photo
    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    IS43LD32320A-3BLI
    IS43LD32320A-3BLI
    ISSI
    IC DRAM 1GBIT PARALLEL 134TFBGA
    Datasheet
    Call
    RFQ
    IS43LD16640A-3BLI
    IS43LD16640A-3BLI
    ISSI
    IC DRAM 1GBIT PARALLEL 134TFBGA
    Datasheet
    Call
    RFQ
    IS43LD32320A-25BLI
    IS43LD32320A-25BLI
    ISSI
    IC DRAM 1GBIT PARALLEL 134TFBGA
    Datasheet
    Call
    RFQ
    IS43LD16640A-25BLI
    IS43LD16640A-25BLI
    ISSI
    IC DRAM 1GBIT PARALLEL 134TFBGA
    Datasheet
    Call
    RFQ
    MT48H32M16LFB4-75B IT:C
    MT48H32M16LFB4-75B IT:C
    Micron
    IC DRAM 512MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H4M32LFB5-75 IT:K
    MT48H4M32LFB5-75 IT:K
    Micron
    IC DRAM 128MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    MT48H4M32LFB5-6 IT:K
    MT48H4M32LFB5-6 IT:K
    Micron
    IC DRAM 128MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    MT48H4M16LFB4-75 IT:H
    MT48H4M16LFB4-75 IT:H
    Micron
    IC DRAM 64MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H32M16LFB4-75 IT:C
    MT48H32M16LFB4-75 IT:C
    Micron
    IC DRAM 512MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H16M32LFB5-75 IT:C
    MT48H16M32LFB5-75 IT:C
    Micron
    IC DRAM 512MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    MT48H16M16LFBF-75 IT:H
    MT48H16M16LFBF-75 IT:H
    Micron
    IC DRAM 256MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H16M16LFBF-6 IT:H
    MT48H16M16LFBF-6 IT:H
    Micron
    IC DRAM 256MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H8M16LFB4-8 IT:J
    MT48H8M16LFB4-8 IT:J
    Micron
    IC DRAM 128MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H8M32LFB5-6 IT:H
    MT48H8M32LFB5-6 IT:H
    Micron
    IC DRAM 256MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    MT48H8M16LFB4-75 IT:K
    MT48H8M16LFB4-75 IT:K
    Micron
    IC DRAM 128MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H8M32LFB5-75 IT:H
    MT48H8M32LFB5-75 IT:H
    Micron
    IC DRAM 256MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    MT48H8M16LFB4-6 IT:K
    MT48H8M16LFB4-6 IT:K
    Micron
    IC DRAM 128MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H4M16LFB4-8 IT:H
    MT48H4M16LFB4-8 IT:H
    Micron
    IC DRAM 64MBIT PARALLEL 54VFBGA
    Datasheet
    Call
    RFQ
    MT48H16M32LFCM-6 L IT:B
    MT48H16M32LFCM-6 L IT:B
    Micron
    IC DRAM 512MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    MT48H16M32LFCM-6 IT:B
    MT48H16M32LFCM-6 IT:B
    Micron
    IC DRAM 512MBIT PARALLEL 90VFBGA
    Datasheet
    Call
    RFQ
    X
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