pallet533 MHz-LPDDR2Parameter Specification Quotation DataSheet-ICQQG

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K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E

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Brand:

Samsung Micron Skhynix nanya ELPIDA ISSI

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Memory format:

DRAM

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Installation type:

Surface mount

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packing:

CT TR,CT box TR pallet bulk bulk,pallet

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Memory type:

Volatile

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storage capacity :

8Gb(128M x 64) 512Mb(16M x 32) 4Gb(64M x 64) 2Gb(64M x 32) 1Gb(32M x 32) 256Mb(8M x 32) 128Mb(4M x 32) 12G 8G 16G 4G 1Gb(64M x 16) 4Gb(256M x 16) 512Mb(32M x 16) 256Mb(16M x 16) 16Gb(512M x 32) 16Gb(256M x 64) 12Gb(384M x 32) 8Gb(256M x 32) 6Gb(192M x 32) 4Gb(128M x 32) 128Mb(8M x 16) 64Mb(4M x 16)

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working temperature :

0°C ~ 85°C(TA) -40°C ~ 125°C(TC) -40°C ~ 105°C(TC) -40°C ~ 105°C(TA) -40°C ~ 85°C(TA) -30°C ~ 85°C(TC) -25°C ~ 85°C(TC) -40°C ~ 85°C(TC) 0°C ~ 70°C(TA) -25°C ~ 85°C(TA)

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Clock frequency:

125 MHz 104 MHz 533 MHz 400 MHz 333 MHz 100 MHz 133 MHz 166 MHz

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Encapsulation/Housing:

240-VFBGA 220-WFBGA 220-VFBGA 216-WFBGA 216-VFBGA 216-UFBGA 168-WFBGA 134-WFBGA 134-VFBGA 134-TFBGA 240-WFBGA 54-VFBGA TSSOP BGA-168 BGA-240 TSSOP54 BGA60 BGA-216 TSSOP-66 TSSOP66 TSOP66 QFP 90-VFBGA TSOP BGA FBGA 253-TFBGA 54-TSOP(0.400,10.16mm wide) 168-VFBGA 121-WFBGA

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choosed:

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Total：32

Photo

Mfr.Part #

Brand

Description

DataSheet

Pricing(USD)

Qty

IS46LD32128C-18BPLA1

IS46LD32128C-18BPLA1

IC DRAM

Call

RFQ

IS43LD16256C-18BPLI

IS43LD16256C-18BPLI

IC DRAM

Call

RFQ

IS46LD32128C-18BPLA2

IS46LD32128C-18BPLA2

IC DRAM

Call

RFQ

EDB4432BBBJ-1DAUT-F-D

EDB4432BBBJ-1DAUT-F-D

IC DRAM 4GBIT PARALLEL 134FBGA

Call

RFQ

EDB4064B4PB-1DIT-F-D

EDB4064B4PB-1DIT-F-D

IC DRAM 4GBIT PARALLEL 216WFBGA

Call

RFQ

EDB8132B4PM-1DAT-F-D

EDB8132B4PM-1DAT-F-D

IC DRAM 8GBIT PARALLEL 168FBGA

1+：$1.07

RFQ

EDB4432BBBJ-1DAAT-F-D

EDB4432BBBJ-1DAAT-F-D

IC DRAM 4GBIT PARALLEL 134FBGA

1+：$21.14

RFQ

EDB2432B4MA-1DIT-F-D

EDB2432B4MA-1DIT-F-D

IC DRAM 2GBIT PARALLEL 134VFBGA

Call

RFQ

MT42L64M64D2LL-18 IT:C

MT42L64M64D2LL-18 IT:C

IC DRAM 4GBIT PARALLEL 216FBGA

Call

RFQ

MT42L64M64D2LL-18 WT:C

MT42L64M64D2LL-18 WT:C

IC DRAM 4GBIT PARALLEL 216FBGA

Call

RFQ

MT42L64M32D1TK-18 AAT:C

MT42L64M32D1TK-18 AAT:C

IC DRAM 2GBIT PARALLEL 134FBGA

1+：$3.75

RFQ

MT42L64M32D1TK-18 IT:C

MT42L64M32D1TK-18 IT:C

IC DRAM 2GBIT PARALLEL 134FBGA

Call

RFQ

MT42L64M32D1LF-18 IT:C

MT42L64M32D1LF-18 IT:C

IC DRAM 2GBIT PARALLEL 168FBGA

Call

RFQ

EDB4416BBBH-1DIT-F-D

EDB4416BBBH-1DIT-F-D

IC DRAM 4GBIT PARALLEL 134FBGA

Call

RFQ

EDB1316BDBH-1DAAT-F-D

EDB1316BDBH-1DAAT-F-D

IC DRAM 1GBIT PARALLEL 134VFBGA

Call

RFQ

EDB8164B4PT-1DAT-F-D

EDB8164B4PT-1DAT-F-D

IC DRAM 8GBIT PARALLEL 216FBGA

1+：$14.29

RFQ

EDB8164B4PR-1D-F-D

EDB8164B4PR-1D-F-D

IC DRAM 8GBIT PARALLEL 216FBGA

1+：$5.43

RFQ

EDB4432BBPE-1D-F-D

EDB4432BBPE-1D-F-D

IC DRAM 4GBIT PARALLEL 533MHZ

Call

RFQ

EDB4064B3PP-1D-F-D

EDB4064B3PP-1D-F-D

IC DRAM 4GBIT PARALLEL 240FBGA

Call

RFQ

MT42L256M64D4LM-18 WT:A

MT42L256M64D4LM-18 WT:A

IC DRAM 16GBIT PARALLEL 216FBGA

Call

RFQ

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