| Installation type | Base installation | 
| packing | bulk | 
| Part status | On sale | 
| working temperature | -40°C ~ 150°C(TJ) | 
| Encapsulation/Housing | SP4 | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 357W | 
| FET Type | 4 N channels(H ) | 
| Drain source voltage (Vdss) | 1000V(1kV) | 
| Current at 25 ° C - continuous drain (Id) | 18A | 
| On resistance (maximum) for different Ids and Vgs | 540 mΩ @ 9A,10V | 
| Vgs (th) (maximum) for different Ids | 5V @ 2.5mA | 
| Gate charge (Qg) at different Vgs (maximum) | 154nC @ 10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 4350pF @ 25V | 
| FET function | standard |