NTBGS004N10G
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NTBGS004N10G
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NTBGS004N10G

Brand:ON
Model:NTBGS004N10G
stock:15208
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 21A(Ta),203A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 4.1 mΩ @ 100A,10V
Vgs (th) (maximum) for different Ids 4V @ 500µA
Gate charge (Qg) at different Vgs (maximum) 178 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 12100 pF @ 50 V
Power dissipation (maximum) 3.7W(Ta),340W(Tc)
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