NVB095N65S3F
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NVB095N65S3F
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NVB095N65S3F

Brand:ON
Model:NVB095N65S3F
stock:96636
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series SuperFET® III
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing D²PAK-3(TO-263-3)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 36A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 95 mΩ @ 18A,10V
Vgs (th) (maximum) for different Ids 5V @ 860µA
Gate charge (Qg) at different Vgs (maximum) 66 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 3020 pF @ 400 V
Power dissipation (maximum) 272W(Tc)
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