| Installation type | Surface mount | 
| packing | TR,CT,bulk | 
| Part status | stop production | 
| working temperature | 150°C(TJ) | 
| Encapsulation/Housing | 3-CPH | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 12 V | 
| Current at 25 ° C - continuous drain (Id) | 3A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4.5V | 
| On resistance (maximum) for different Ids and Vgs | 70 mΩ @ 1.5A,4.5V | 
| Gate charge (Qg) at different Vgs (maximum) | 5.6 nC @ 4.5 V | 
| Vgs (max) | ±10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 405 pF @ 6 V | 
| Power dissipation (maximum) | 1W(Ta) |