IMBG120R060M1HXTMA1
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IMBG120R060M1HXTMA1
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IMBG120R060M1HXTMA1

Brand:Infineon
Model:IMBG120R060M1HXTMA1
stock:94016
Store:ShenZhen/Hongkong
Price:1+
$2.85
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product details
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Installation type Surface mount
packing TR,CT
series CoolSiC™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-7-12
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 36A(Tc)
On resistance (maximum) for different Ids and Vgs 83 mΩ @ 13A,18V
Vgs (th) (maximum) for different Ids 5.7V @ 5.6mA
Gate charge (Qg) at different Vgs (maximum) 34 nC @ 18 V
Vgs (max) +18V,-15V
Input capacitance at different Vds (Ciss) (maximum) 1145 pF @ 800 V
FET function standard
Power dissipation (maximum) 181W(Tc)
Common problem
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