Total: 226
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiC(Silicon carbide bonded crystal tube)
GaNFET(Gallium nitride)
P channels
N channels
±20V
±30V
±10V
+23V,-10V
-
±25V
±16V
±15V
+5V,-16V
-10V
125W(Tc)