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    Home/    Category/    FLASH/    W66BM6NBUAFI TR

    IC DRAM 2GBIT LVSTL 11 200WFBGA W66BM6NBUAFI TR

    W66BM6NBUAFI TR image
    The pictures are for reference only
    Brand:
    Winbond
    Model:
    W66BM6NBUAFI TR
    Description:
    IC DRAM 2GBIT LVSTL 11 200WFBGA
    Stock:
    7221
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Clock frequency
    1.6GHz
  • Memory interface
    LVSTL_11
  • Memory type
    Volatile
  • Voltage - Supply
    1.06V ~ 1.17V,1.7V ~ 1.95V
  • Write cycle time - words, pages
    18ns
  • packing
    CT
  • storage capacity
    2Gb(128M x 16)
  • technology
    SDRAM - Mobile LPDDR4X
  • working temperature
    -40°C ~ 95°C(TC)
  • Encapsulation/Housing
    200-WFBGA
  • Country of origin
    Taiwan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
    • PDFicoDataSheet
    W66BM6NBUAFI TR（FLASH）ByWinbondDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7221,Price reference "real-time change" China/Hongkong。 W66BM6NBUAFI TR package/specs, Download W66BM6NBUAFI TR、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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    News
    Memory giant Winbond Electronics' revenue in September was NT$7.352 billion, down 19.29% year-on-year 2022.10.17
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    Texas Instruments' new Texas chip factory began mass production 2022.10.08
    M393A2K43EB3-CWE Samsung DDR4 3200 16G Server Memory ECC REG 2022.09.08
    M474A1K43DB1-CWE Samsung DDR4 3200 8GB notebook ECC memory 2022.09.06
    M391A4G43AB1-CVF Samsung DDR4 2933 ECC 32GB server memory module 2022.09.02
    M393A4K40CB2-CVF Samsung DDR4 2933 32GB server memory 2022.09.09
    HMAA4GR7AJR8N-WM Hynix (SK Hyundai) DDR4 2933 32G server memory 2022.09.14
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