NTNS3164NZT5G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTNS3164NZT5G

Description:

MOSFET N-CH 20V 361MA SOT883

Stock:

88504

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

361mA(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.5V,4.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

0.8 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

24 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

700 mΩ @ 200mA,4.5V

Power dissipation (maximum)

155mW(Ta)

Vgs (max)

±8V

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,CT

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-883(XDFN3)(1x0.6)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

Download NTNS3164NZT5G.pdf

NTNS3164NZT5G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory88504,Price reference "real-time change" China/Hongkong。 NTNS3164NZT5G package/specs, Download NTNS3164NZT5G、Datasheet。

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