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    Home/    Category/    MOSFET/    NTNS3A65PZT5G

    MOSFET P-CH 20V 281MA SOT883 NTNS3A65PZT5G

    NTNS3A65PZT5G image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTNS3A65PZT5G
    Description:
    MOSFET P-CH 20V 281MA SOT883
    Stock:
    63088
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    281mA(Ta)
  • Drain source voltage (Vdss)
    20 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    1.5V,4.5V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    1.1 nC @ 4.5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    44 pF @ 10 V
  • On resistance (maximum) for different Ids and Vgs
    1.3 Ω @ 200mA,4.5V
  • Power dissipation (maximum)
    155mW(Ta)
  • Vgs (max)
    ±8V
  • Vgs (th) (maximum) for different Ids
    1V @ 250µA
  • packing
    TR,CT,bulk
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    SOT-883(XDFN3)(1x0.6)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    Final sale
    • PDFicoDataSheet
    NTNS3A65PZT5G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63088,Price reference "real-time change" China/Hongkong。 NTNS3A65PZT5G package/specs, Download NTNS3A65PZT5G、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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