FQD4N25TM-WS parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

FQD4N25TM-WS

Description:

MOSFET N-CH 250V 3A DPAK

Stock:

46704

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

3A(Tc)

Drain source voltage (Vdss)

250 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

5.6 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

200 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

1.75 Ω @ 1.5A,10V

Power dissipation (maximum)

2.5W(Ta),37W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 250µA

packing

TR,CT

series

QFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-252AA

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

Final sale

DataSheet

Download FQD4N25TM-WS.pdf

FQD4N25TM-WS（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46704,Price reference "real-time change" China/Hongkong。 FQD4N25TM-WS package/specs, Download FQD4N25TM-WS、Datasheet。

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MOSFET N-CH 250V 3A DPAK FQD4N25TM-WS