FQPF9N50CT parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

FQPF9N50CT

Description:

MOSFET N-CH 500V 9A TO220F

Stock:

2538

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

RFQ

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Parameters

Current at 25 ° C - continuous drain (Id)

9A(Tc)

Drain source voltage (Vdss)

500 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

35 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1030 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

800 mΩ @ 4.5A,10V

Power dissipation (maximum)

44W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

QFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220F-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

FQPF9N50CT（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2538,Price reference "real-time change" China/Hongkong。 FQPF9N50CT package/specs, Download FQPF9N50CT、Datasheet。

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MOSFET N-CH 500V 9A TO220F FQPF9N50CT