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    Home/    Category/    MOSFET/    NTHS5441PT1G

    MOSFET P-CH 20V 3.9A CHIPFET NTHS5441PT1G

    NTHS5441PT1G image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTHS5441PT1G
    Description:
    MOSFET P-CH 20V 3.9A CHIPFET
    Stock:
    37832
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    3.9A(Ta)
  • Drain source voltage (Vdss)
    20 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    -
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    22 nC @ 4.5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    710 pF @ 5 V
  • On resistance (maximum) for different Ids and Vgs
    46 mΩ @ 3.9A,4.5V
  • Power dissipation (maximum)
    1.3W(Ta)
  • Vgs (max)
    -
  • Vgs (th) (maximum) for different Ids
    1.2V @ 250µA
  • packing
    TR
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    ChipFET™
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    NTHS5441PT1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37832,Price reference "real-time change" China/Hongkong。 NTHS5441PT1G package/specs, Download NTHS5441PT1G、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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