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    Home/    Category/    MOSFET/    DMN53D0LT-7

    DIODE DMN53D0LT-7

    DMN53D0LT-7 image
    The pictures are for reference only
    Brand:
    Diodes
    Model:
    DMN53D0LT-7
    Description:
    DIODE
    Stock:
    87864
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    350mA(Ta)
  • Drain source voltage (Vdss)
    50 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    2.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    0.6 nC @ 4.5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    46 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    1.6 Ω @ 500mA,10V
  • Power dissipation (maximum)
    300mW(Ta)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    1.5V @ 250µA
  • packing
    bulk
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    SOT-523
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    DMN53D0LT-7（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87864,Price reference "real-time change" China/Hongkong。 DMN53D0LT-7 package/specs, Download DMN53D0LT-7、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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