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    Home/    Category/    RLDRAM/    MT49H16M36BM-25E:B TR

    IC DRAM 576MBIT PARALLEL 144UBGA MT49H16M36BM-25E:B TR

    MT49H16M36BM-25E:B TR image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT49H16M36BM-25E:B TR
    Description:
    IC DRAM 576MBIT PARALLEL 144UBGA
    Stock:
    15861
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    -
  • Access time
    15 ns
  • Clock frequency
    400 MHz
  • Current - maximum
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    1.7V ~ 1.9V
  • packing
    TR
  • series
    -
  • storage capacity
    576Mb(16M x 36)
  • technology
    RLDRAM(1&2)
  • working temperature
    0°C ~ 95°C(TC)
  • Encapsulation/Housing
    144-TFBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • -
    • PDFicoDataSheet
    MT49H16M36BM-25E:B TR（RLDRAM）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15861,Price reference "real-time change" China/Hongkong。 MT49H16M36BM-25E:B TR package/specs, Download MT49H16M36BM-25E:B TR、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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