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    Home/    Category/    SDRAM/    IS42RM32400H-6BLI

    IC DRAM 128MBIT PARALLEL 90TFBGA IS42RM32400H-6BLI

    IS42RM32400H-6BLI image
    The pictures are for reference only
    Brand:
    ISSI
    Model:
    IS42RM32400H-6BLI
    Description:
    IC DRAM 128MBIT PARALLEL 90TFBGA
    Stock:
    5557
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    Price：$1.05
    The market price fluctuates. Please consult the customer service for the actual price
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    5.5 ns
  • Clock frequency
    166 MHz
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Voltage - Supply
    2.3V ~ 2.7V
  • Write cycle time - words, pages
    -
  • packing
    pallet
  • series
    -
  • storage capacity
    128Mb(4M x 32)
  • working temperature
    -40°C ~ 85°C(TA)
  • Encapsulation/Housing
    90-TFBGA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    IS42RM32400H-6BLI（SDRAM）ByISSIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5557,Price reference "real-time change" China/Hongkong。 IS42RM32400H-6BLI package/specs, Download IS42RM32400H-6BLI、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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    ECC Memory Stick Recommendation (ECC Memory Stick List) 2022.09.06
    Memory giant Winbond Electronics' revenue in September was NT$7.352 billion, down 19.29% year-on-year 2022.10.17
    Samsung official website on the 990 PRO / heatsink version: using Samsung's self-developed controller, 1T start 2022.10.13
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