NVF3055L108T1G
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NVF3055L108T1G
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NVF3055L108T1G

Brand:ON
Model:NVF3055L108T1G
stock:37799
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing CT,bulk
series Automotive, AEC-Q101
Part status Not applicable to new design
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing SOT-223(TO-261)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 3A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V
On resistance (maximum) for different Ids and Vgs 120 mΩ @ 1.5A,5V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 15 nC @ 5 V
Vgs (max) ±15V
Input capacitance at different Vds (Ciss) (maximum) 440 pF @ 25 V
Power dissipation (maximum) 1.3W(Ta)
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