SSU1N50BTU parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

SSU1N50BTU

Description:

MOSFET N-CH 520V 1.3A IPAK

Stock:

25179

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

1.3A(Tc)

Drain source voltage (Vdss)

520 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

11 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

340 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

5.3 Ω @ 650mA,10V

Power dissipation (maximum)

2.5W(Ta),26W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

I-PAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Not applicable to new design

DataSheet

Download SSU1N50BTU.pdf

SSU1N50BTU（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25179,Price reference "real-time change" China/Hongkong。 SSU1N50BTU package/specs, Download SSU1N50BTU、Datasheet。

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MOSFET N-CH 520V 1.3A IPAK SSU1N50BTU